Виаком: электронные компоненты. Datasheet
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July 2002
BSS84
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.
Features
· · · -0.13A, -50V. RDS(ON) = 10 @ VGS = -5 V Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) High saturation current
·
D
D
S
G S
SOT-23
G
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation Derate Above 25°C
Parameter
Ratings
-50 ±20
(Note 1)
Units
V V A W mW/°C °C
-0.13 -0.52 0.36 2.9 -55 to +150 300
(Note 1)
Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1)
350
°C/W
Package Marking and Ordering Information
Device Marking SP Device BSS84 Reel Size 7'' Tape width 8mm Quantity 3000 units
2002 Fairchild Semiconductor Corporation
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Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage.
(Note 2)
Test Conditions
ID = 250 µA VGS = 0 V, ID = 250 µA,Referenced to 25°C VDS = 50 V, VGS = ±20 V, VGS = 0 V VDS = 0 V
Min Typ
50 48
Max
Units
V mV/°C
Off Characteristics
15 60 ±10
µA µA nA
VDS = 50 V,VGS = 0 V TJ = 125°C
On Characteristics
VGS(th) VGS(th) TJ RDS(on) ID(on) gFS
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VDS = VGS,
ID = 1 mA
0.8
ID = 1 mA,Referenced to 25°C VGS = 5 V, ID = 0.10 A VGS = 5 V,ID = 0.10 A,TJ=125°C VGS = 5 V, VDS = 10 V VDS = 25V, ID = 0.10 A
1.7 3 1.2 1.9
2
V mV/°C
10 17
A
0.6 0.05 0.6
S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 25 V, f = 1.0 MHz
V GS = 0 V,
73 10 5 9
pF pF pF
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 30 V, VGS = 10 V,
ID = 0.27A, RGEN = 6
2.5 6.3 10 4.8
5 13 20 9.6 1.3
ns ns ns ns nC nC nC
VDS = 25 V, VGS = 5 V
ID = 0.10 A,
0.9 0.2 0.3
DrainSource Diode Characteristics and Maximum Ratings
IS VSD trr Qrr Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 0.26 A(Note 2) 0.8 10
(Note 2)
0.13 1.2
A V nS nC
IF = 0.10A diF/dt = 100 A/µs
3
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 350°C/W when mounted on a minimum pad..
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
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Typical Characteristics
1
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = -5V
-ID, DRAIN CURRENT (A) 0.8
-4.5V
2 -3.5V 1.8 VGS=-3.0V 1.6 1.4 -3.5V 1.2 1 0.8 -4.0V -4.5V -5.0V
0.6
-3.0V
0.4
0.2
-2.5V
0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
5
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
RDS(ON), ON-RESISTANCE (OHM)
ID = -0.10A VGS = -5V
ID = -0.05A
4
3
TA = 125oC
2
TA = 25oC
1 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V)
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
1
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
1
TA = -55oC 125oC
25oC
-ID, DRAIN CURRENT (A)
0.8
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
VGS = 0V 0.1 TA = 125oC 25oC -55oC 0.001
0.6
0.01
0.4
0.2
0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V)
100
ID = -0.10A VDS = -8V -25V -30V
f = 1 MHz VGS = 0 V 80 CAPACITANCE (pF) CISS
4
3
60
2
40
1
20 COSS CRSS 0
0 0.2 0.4 0.6 0.8 1
0 Qg, GATE CHARGE (nC)
0
10
20
30
40
50
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10ms 0.1 1s DC 0.01 VGS = -5V SINGLE PULSE RJA = 350oC/W TA = 25oC 0.001 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 100ms 10s 1ms
P(pk), PEAK TRANSIENT POWER (W) 5
Figure 8. Capacitance Characteristics.
100us
4
SINGLE PULSE RJA = 350°C/W TA = 25°C
3
2
1
0 0.01
0.1
1 t1, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RJA(t) = r(t) * RJA
0.2
RJA = 350oC/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.1
0.1 0.05 0.02
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design.
BSS84 Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I
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